^s-tni-donaactoi ^products., 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 bfw12 BFW13 n-channel silicon fets symmetrica! n-channel silicon planar epitaxial junction field-effect transistors in to-72 metal envelopes with the shield lead connected to the case. the transistors are intended for battery powered equipment and other low current-low voltage applications. quick reference data drain-source voltage vrjs max. 30 gate-source voltage (open drain) ~vgso max. 30 total power dissipation up to tamd =* 1 10 c ptot max. 1 50 bfw12 BFW13 liram current ^^ ." vds=15v;vgs>0 idss < 5 gate-source cut-off voltage ld = 0,5na;vds=15v -v(p)qs < 2,5 feedback capacitance at f = 1 mhz vds= 15v;vgs = 0 cra < 0.80 transfer admittance (common source) vds=15v;ld = 200ma;f=1 kh2 |yfs > 0,5 equivalent noise voltage vds=15v;ld = 200(ia b = 0.6 to 100 hz vn < 0.5 0,2 1,5 1.2 0,80 0,5 0,5 v v mw ma ma v pf ms mv mechanical data dimensions in mm fig. 1 to-72. pinning 1 - source 2 drain 3 = gate 4 - shield lead connected to case note: drain and source are interchangeable. nj .semi-c t'lidutlors reserves the right to change test conditions, parameter limit! und package dimensions wiihonl notice inliirmation rumith?t) by nj scmi-cunducton if believed to he both uccurale find reliable m the lime of going to press. however vini-l iinjuclor; .i^suines mi re'-ptnuibility lor ;iny errors >>r uinissiiins jiscuvured in its ii.->e m.i scim-c un.liii.tirs ii-;k nn'fs fi) \ciif\u il;iln-;hivli n-charmel silicon fets characteristics tj ? 25 c gate cut-off currents -vgs = 10 v; yds = o -igss -vgs-10v;vds=0;tj = 1s00c -igss drain current *) yds = is v; vgs= o idss gate -source voltage id= 50^^08 = 15v -vgs gate-source cut-off voltage id = 0. 5na; vqs = 15 v ~v(p)gs y parameters at f = 1 khz; tamb = 25 c vds = 15 v; vgs = 0 transfer admittance |vfs| output admittance |yos| vds = 15 v; id = 500 p a transfer admittance |yjs| output admittance |yosj vds = 1s v'- 1d = 200 (aa transfer admittance |yfs| output admittance lvos| f - 1 mhz; tamb - 25 c yds = is v; vgs = o input capacitance cjss feedback capacitance crs equivalent noise voltage yds = 15 v; 1d = 200 (ia; tamb = 25 c b = 0. 6 to 100 hz vn bfw12 BFW13 j i bfw12 1 1 BFW13 unless otherwise specified bfw12 BFW13 < 0.1 0. 1 na < 0. 1 0. 1 |^a > 1 0.2 ma < 5 1.5 ma > 0.5 0.1 v < 2.0 1.0 v < 2.5 1.2 v > 2.0 1.0 ms < 30 10 gs > 1.5 - ms < 10 - ps > 0.5 0.5 ms < 5 5 ps < 5 5 pf < 0.80 0.80 pf < 0.5 0.5 yv ratings limiting values in accordance with the absolute maximum system (iec 134) drain-source voltage ^ds max. drain-gate voltage (open source) ^dco max. gate-source voltage (open drain) ~vgso max. drain current iq max. gate current ig max. 30 v 30 v 30 v 10 ma s ma total power dissipation up to tamb = 86 c rtot max. 150 mw storage temperature range junction temperature thermal resistance from junction to ambient tstg -65 to+175 c rt-h i - a max. 175 590 kf/ui
bfw12 BFW13 ratings limiting values in accordance with the absolute maximum system (iec 134) drain-source voltage *^ds max. 30 v drain-gate voltage (open source) vdgo max. 30 v gate-source voltage (open drain) "^gso max. 30 v drain current irj max, 10 ma gate current iq max. 5 ma total power dissipation up to tamb = 86 c ptot max. iso mw storage temperature range tstg "65 to + 1 75 c junction temperature tj max. 175 c thermal resistance from junction to ambient r^ j_a = 590 k/w
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